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Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTSHIRAMOTO, Toshiro; SUZUKI, Makoto; XIAOWEI SONG et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 8, pp 2249-2256, issn 0018-9383, 8 p.Article